Energy gap reduction in dilute nitride GaAsSbN
YT Lin, TC Ma, TY Chen, HH Lin - Applied Physics Letters, 2008 - pubs.aip.org
The energy gap of dilute nitride GaAsSbN has been studied. We found that the energy gap
reduction induced by nitrogen incorporation is nearly independent of the Sb composition of …
reduction induced by nitrogen incorporation is nearly independent of the Sb composition of …
Spatial correlation between Bi atoms in dilute : From random distribution to Bi pairing and clustering
We use x-ray absorption spectroscopy to investigate the local structure around Bi atoms in
GaAs 1− x Bi x layers grown on GaAs as a function of Bi concentration in order to detect …
GaAs 1− x Bi x layers grown on GaAs as a function of Bi concentration in order to detect …
Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice-matching condition for 1.0–1.16-eV photonic applications
As promising candidates for solar cell and photodetection applications in the range 1.0–1.16
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
GaAsSbN alloys is recognized as an effective candidate to incorporate in multijunction solar
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
Formation and vanishing of short range ordering in thin films
G Ciatto, M Thomasset, F Glas, X Lu, T Tiedje - Physical Review B …, 2010 - APS
We address the compositional evolution of the structure of GaAs 1− x Bi x thin films at
different scale lengths by combining x-ray absorption spectroscopy, atomic force …
different scale lengths by combining x-ray absorption spectroscopy, atomic force …
[LIVRE][B] Hydrogenated Dilute Nitride Semiconductors: Theory, Properties, and Applications
G Ciatto - 2015 - books.google.com
The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides
open the way to the manufacture of a new class of nanostructured devices with in-plane …
open the way to the manufacture of a new class of nanostructured devices with in-plane …
How much room for BiGa heteroantisites in GaAs1− xBix?
G Ciatto, P Alippi, A Amore Bonapasta… - Applied Physics …, 2011 - pubs.aip.org
We addressed the issue of bismuth heteroantisite defects (Bi Ga) in GaAs 1− x Bi x/GaAs
epilayers by coupling x-ray absorption spectroscopy at the bismuth edge with density …
epilayers by coupling x-ray absorption spectroscopy at the bismuth edge with density …
Nitrogen map** from ADF imaging analysis in quaternary dilute nitride superlattices
A method for the determination of N distribution in dilute nitride GaAsSbN superlattices (SLs)
by using different STEM imaging settings is proposed. The method combines the …
by using different STEM imaging settings is proposed. The method combines the …
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
The use of GaAsSbN cap** layers on InAs/GaAs quantum dots (QDs) has recently been
proposed for micro-and optoelectronic applications for their ability to independently tailor …
proposed for micro-and optoelectronic applications for their ability to independently tailor …
Local structure of nitrogen-hydrogen complexes in dilute nitrides
G Ciatto, F Boscherini, A Amore Bonapasta… - Physical Review B …, 2009 - APS
We have investigated the structure of nitrogen-hydrogen complexes in GaAs 1− y N y and In
x Ga 1− x As 1− y N y dilute nitride alloys by performing x-ray absorption near-edge structure …
x Ga 1− x As 1− y N y dilute nitride alloys by performing x-ray absorption near-edge structure …