Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective

AK Upadhyay, SB Rahi, S Tayal, YS Song - Microelectronics Journal, 2022‏ - Elsevier
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …

A review on emerging negative capacitance field effect transistor for low power electronics

SB Rahi, S Tayal, AK Upadhyay - Microelectronics Journal, 2021‏ - Elsevier
Power consumption is the major concern for conventional CMOS based integrated circuit
and systems. Since there is a scope of lowering supply voltage with steep-subthreshold …

Numerical assessment of dielectrically-modulated short-double-gate PNPN TFET-based label-free biosensor

K Baruah, S Baishya - Microelectronics Journal, 2023‏ - Elsevier
A comprehensive investigation of dielectrically modulated Ge-source short double-gate
PNPN tunnel FET (SG-PNPN TFET) based label-free biosensor is presented. Short gates …

Device and circuit-level performance comparison of GAA nanosheet FET with varied geometrical parameters

NA Kumari, P Prithvi - Microelectronics Journal, 2022‏ - Elsevier
In this paper, DC and analog/RF figures of merit (FOMs) for different geometrical variations
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …

A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications

M Saravanan, E Parthasarathy - Microelectronics Journal, 2021‏ - Elsevier
Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

Insights into the operation of negative capacitance FinFET for low power logic applications

RK Jaisawal, PN Kondekar, S Yadav, P Upadhyay… - Microelectronics …, 2022‏ - Elsevier
In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …

Recent advances in negative capacitance FinFETs for low-power applications: a review

V Chauhan, DP Samajdar - IEEE Transactions on Ultrasonics …, 2021‏ - ieeexplore.ieee.org
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …

Utilization of negative-capacitance FETs to boost analog circuit performances

Y Liang, Z Zhu, X Li, SK Gupta, S Datta… - … Transactions on Very …, 2019‏ - ieeexplore.ieee.org
Negative-capacitance FETs (NCFETs) are a promising candidate for low-power circuits with
intrinsic features, eg, the steep switching slope. Prior works have shown potential for …

Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs

N Kumar, V Purwar, H Awasthi, R Gupta, K Singh… - Microelectronics …, 2021‏ - Elsevier
The present article deals with the analytical modeling of threshold voltage of an ultra-thin
nanotube Junctionless double-gate-all-around (NJL-DGAA) metal-oxide-semiconductor field …

Assessing RF/AC performance and linearity analysis of NCFET in CMOS-compatible thin-body FDSOI

S Roy, P Chakrabarty, R Paily - IEEE Transactions on Electron …, 2021‏ - ieeexplore.ieee.org
The ever-growing exploration of negative capacitance field effect transistors (NCFETs) for
low-power digital application and recent integration in the advanced technology node calls …