High-performance tin oxide thin-film transistors realized by codo** and their application in logic circuits

T Zhang, YF Wei, CS Zhang, G He, TJ Li… - ACS Applied Materials …, 2024 - ACS Publications
Tin oxide is a promising channel material, offering the advantages of being low-cost and
environmentally friendly and having a wide band gap. However, despite the high electron …

[HTML][HTML] High-performance metal oxide TFTs for flexible displays: materials, fabrication, architecture, and applications

SP Jeon, JW Jo, D Nam, YH Kim, SK Park - Soft Science, 2025 - oaepublish.com
Flexible display technology is actively explored as a cornerstone of the next generation of
wearables and soft electronics, set to revolutionize devices with its potential for lightweight …

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Y Lan, M Fanxin - Solid-State Electronics, 2024 - Elsevier
In this study, an inorganic–organic hybrid thin-film transistor (TFT) with a top-gate structure is
prepared using an inorganic ZnSnO film prepared via pulse plasma deposition as the …

Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors

S Jaiswal, J Singh, M Goswami… - … Science and Technology, 2024 - iopscience.iop.org
Traps in ZnO thin film transistors (TFTs) affect the electrical characteristics of the device.
Traps originate primarily due to the disordered nature of the deposited semiconductor …

Preparation and optimization of MTO/Ag/MTO transparent flexible film based on co-sputtering at room temperature

M Su, S Shi, J Chen, D Ren, L Yue, F Meng - Applied Physics A, 2024 - Springer
Abstract The transparent flexible SnO2: Mo/Ag/SnO2: Mo (MTO/Ag/MTO) triple-layer film was
prepared based on co-sputtering at room temperature for the first time. The optimization of …