Transition metal dichalcogenides in the class MX 2 (M= Mo, W; X= S, Se) have been
identified as direct-gap semiconductors in the monolayer limit. Here, we examine light …

We report the direct observation of a bottleneck in electron cooling in wide GaAs quantum
wells. Intersubband lifetimes τ and their dependence on intensity, lattice temperature TL …

Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range
between 1.8 and 275 K, at an electric field up to 35 kV m− 1 and magnetic fields up to 11 T …

We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-
dimensional ballistic constriction, using the Mott relation to confirm the calibration from the …

We report the experimental studies of hot-electron energy and momentum relaxation in the
steady state in GaN/AlGaN HEMT structures with a high two-dimensional electron density of …

The electronic properties of modulation-doped multiple quantum wells (MWQ) with well
width in the range between 51 and 145 Å have been investigated by using the Shubnikov …

We investigate the power loss per electron mechanism of hot electrons generated under
electric and magnetic fields in n-type In x Ga 1-x As 1-y Bi y epitaxial layers. Acoustic …

The Hall effect is theoretically studied in a rectangular quantum well (RQW) with infinite
barriers subjected to a crossed dc electric field and magnetic field (the magnetic field is …

The electron relaxation mechanism of the electrons in the pseudo triangle quantum well
located in the Al 0.3 Ga 0.7 N/GaN heterostructure interface grown by the Molecular Beam …

We report the observation of thermal annealing-and nitrogen-induced effects on electronic
transport properties of as-grown and annealed n-and p-type modulation-doped Ga 1-x In x N …