In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …

The influence of the structural detail and defects on the thermal and electronic transport
properties of graphene nanoribbons (GNRs) is explored by molecular dynamics and non …

We compute both electron and phonon transmissions in thin disordered silicon nanowires
(SiNWs). Our atomistic approach is based on tight-binding and empirical potential …

Based on atomistic calculations of electron and phonon transport, we propose to use surface-
decorated silicon nanowires for thermoelectric applications. Two examples of surface …

We present an ab initio study which identifies dominant effects leading to thermal
conductivity reductions in carbon and boron-nitride nanotubes with isotope disorder. Our …

We report a first principles formalism and its numerical implementation for treating quantum
transport properties of nanoelectronic devices with atomistic disorder. We develop a …

Isotopic composition can dramatically affect thermal transport in nanoscale heat conduits
such as nanotubes and nanowires. A 50% increase in thermal conductivity for isotopically …

A simulation framework that couples atomistic electronic structures to Boltzmann transport
formalism is developed and applied to calculate the transport characteristics of thin silicon …

An efficient approach for the simulation of electronic transport in nanoscale transistors is
presented based on the multi-subband Boltzmann transport equation under the relaxation …