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Template-based electrodeposited nonmagnetic and magnetic metal nanowire arrays as building blocks of future nanoscale applications
Realizing promising materials for use in next-generation devices at the nanoscale is of
enormous importance from both fundamental and applied perspectives. Nonmagnetic and …
enormous importance from both fundamental and applied perspectives. Nonmagnetic and …
Spin injection, relaxation, and manipulation in GaN-based semiconductors
Z Sun, N Tang, S Zhang, S Chen, X Liu… - Advances in Physics …, 2023 - Taylor & Francis
GaN-based semiconductors are deemed to be a potential candidate for develo**
spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie …
spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie …
Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices
Because spin‐orbit coupling in wurtzite semiconductors is relatively weak compared with
that in zincblende ones, the III‐nitride semiconductor GaN is a promising material for high …
that in zincblende ones, the III‐nitride semiconductor GaN is a promising material for high …
Spin-Orbit Interaction in / Heterojunctions Probed by Electron Spin Resonance
Fundamental aspects of spin-orbit interaction in commercially relevant Ga N/Al x Ga 1− x N
heterostructures hosting two-dimensional electron systems are extensively studied by …
heterostructures hosting two-dimensional electron systems are extensively studied by …
High-efficient and gate-tunable spin transport in GaN thin film at room temperature
Q Wu, D Lin, M Chen, J Li, W Hu, X Wu, F Xu… - Applied Physics …, 2023 - pubs.aip.org
The emerging semiconductor spintronics has offered a practical routine for develo** high-
speed and energy-efficient electronic and optoelectronic devices. GaN holds broad …
speed and energy-efficient electronic and optoelectronic devices. GaN holds broad …
Electrical spin injection into the 2D electron gas in AlN/GaN heterostructures with ultrathin AlN tunnel barrier
The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by
magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a …
magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a …
High-efficient spin injection in GaN at room temperature through a van der Waals tunnelling barrier
Achieving high-efficient spin injection in semiconductors is critical for develo** spintronic
devices. Although a tunnel spin injector is typically used, the construction of a high-quality …
devices. Although a tunnel spin injector is typically used, the construction of a high-quality …
Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN
In this work, we demonstrate room temperature ferromagnetism in nonpolar, m-plane
manganese doped gallium nitride (m-GaN: Mn) epitaxial thin films synthesized using plasma …
manganese doped gallium nitride (m-GaN: Mn) epitaxial thin films synthesized using plasma …
Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers
Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material
due to its various benefits. Especially, development of a buffer layer between GaN and the …
due to its various benefits. Especially, development of a buffer layer between GaN and the …
Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects
Owing to their superior optical properties, semiconductor nanopillars/nanowires in one-
dimensional (1D) geometry are building blocks for nano-photonics. They also hold potential …
dimensional (1D) geometry are building blocks for nano-photonics. They also hold potential …