Since the contact resistance characterized by a specific contact resistivity (ρ c) in the
source/drain (S/D) regions is becoming a bottleneck for further improving device …

Ensuring the stable and safe operation of the power system is an important work of the
national power grid companies. The power grid company has established a special power …

Devices based on the unique phase transitions of phase change materials (PCMs) like
GeTe and Ge 2 Sb 2 Te 5 (GST) require low-resistance and thermally stable Ohmic contacts …

Record-low contact resistivity (pc) for n-Si, down to 1.5× 10− 9 Q-cm2, is achieved on Si: P
epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge …

We present (i) a novel, thermally stable Atomic Layer Deposition (ALD) high-k dielectric
stack that, for the first time, has the potential to meet all gate stack requirements for both n …

In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises
serious concerns of high metal/semiconductor contact resistance. Confronting this problem …

As contact resistance becomes a bottle-neck in scaled CMOS devices, there is a need for
source/drain epitaxy with maximum dopant concentrations and optimized contacting …

This work discusses the thermal stability of metal-insulator-semiconductor (MIS) contacts. A
case study is performed on a typical low-Schottky barrier height (qφb) MIS contact: Ti/TiO 2/n …

With the development of the smart grid, the traditional defect detection methods in
transmission lines are gradually shifted to the combination of robots or drones and deep …

Applying simulations and experiments, this paper systematically compares contact
resistivities (ρ c) of metal-insulator-semiconductor (MIS) contacts and metal-semiconductor …