[HTML][HTML] Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga 2 O 3
homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while …
homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while …
[HTML][HTML] Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches
In this work, we explored the growth regime of (100) β-Ga 2 O 3 homoepitaxial films on
substrates with different miscut angles (1, 2, and 4) in the MOVPE system. Under a low O …
substrates with different miscut angles (1, 2, and 4) in the MOVPE system. Under a low O …
A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices
JK Hite - Crystals, 2023 - mdpi.com
This paper reviews some of the basic issues in homoepitaxial growth of III-nitrides to enable
a vertical device technology. It focuses on the use of metal organic chemical vapor …
a vertical device technology. It focuses on the use of metal organic chemical vapor …
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
S Luo, K Fu, Q **-density p-type GaN with nitrogen-annealed Mg
S Lu, M Deki, J Wang, K Ohnishi, Y Ando… - Applied Physics …, 2021 - pubs.aip.org
We have demonstrated a fabrication process for the Ohmic contact on low-do**-density p-
type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 Ω …
type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 Ω …
Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy
A vertical GaN p+-n junction diode with an ideal breakdown voltage was grown by halide
vapor phase epitaxy (HVPE). A steep p+-n interface was observed even with the use of the …
vapor phase epitaxy (HVPE). A steep p+-n interface was observed even with the use of the …
[HTML][HTML] Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering
Y Gao, S Xu, J Zhang, J Zhang, H Tao, Y Zhang, H Su… - Materials & Design, 2023 - Elsevier
GaN-on-diamond wafers are investigated to overcome the heat accumulation issues in GaN-
based electronic devices. Until now, growing the high-quality GaN film on the diamond for …
based electronic devices. Until now, growing the high-quality GaN film on the diamond for …
Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure
Here, we report that a source of Si impurities commonly observed on (010) β-Ga 2 O 3 is
from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid …
from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid …
Toward Precise n-Type Do** Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to
predict the do** level measured from the Hall Effect measurement at room temperature …
predict the do** level measured from the Hall Effect measurement at room temperature …