Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …

Imperative introduction of biosensor in the field of medicine, defence, food safety, security
and environmental contamination detection acquired paramount attraction. Thus the …

Junctionless transistors are variable resistors controlled by a gate electrode. The silicon
channel is a heavily doped nanowire that can be fully depleted to turn the device off. The …

We experimentally investigate the sensitivity of threshold voltage (T) to the variation of
silicon nanowire (SiNW) width (W si) in gate-all-around junctionless transistors by …

This paper presents the evaluation of the analog properties of nMOS junctionless (JL)
multigate transistors, comparing their performance with those exhibited by inversion-mode …

This paper presents a radio-frequency (RF) model and extracted model parameters for
junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors …

A bulk current model is formulated for long-channel double-gate junctionless (DGJL)
transistors. Using a depletion approximation, an analytical expression is derived from the …

Junctionless transistors are variable resistors controlled by a gate electrode. The silicon
channel is a heavily doped nanowire that can be fully depleted to turn the device off. The …

A silicon nanowire (Si-NW) with a gate-all-around (GAA) structure is implemented on a bulk
wafer for a junctionless (JL) field-effect transistor (FET). A suspended Si-NW from the bulk-Si …

In this paper, an analytical model for Junctionless (JL) Metal–Oxide–Semiconductor Field-
Effect Transistor (MOSFET) based biosensor for label free electrical detection of …