Orbital occupancy control in correlated oxides allows the realization of new electronic
phases and collective state switching under external stimuli. The resultant structural and …

Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …

This perspective considers the enormous promise of epitaxial functional transition metal
oxide thin films for future applications in low power electronic and energy applications since …

Two-dimensional electron gases (2DEGs) at oxide interfaces may exhibit unique properties,
including effects from strong electron correlations, extremely high electron densities …

Driven by an ever‐expanding interest in new material systems with new functionality, the
growth of atomic‐scale electronic materials by molecular beam epitaxy (MBE) has evolved …

Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing
semiconductor heterostructures with high purity, high mobility, and exquisite control of layer …

Oxide heterostructures have been shown to exhibit unusual physics and hold the promise of
novel electronic applications. We present a set of criteria to select and design interfaces …

Epitaxial SrRuO 3 and CaRuO 3 films were grown under an excess flux of elemental
ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the …

We investigate the angular dependence of the magnetoresistance of thin (< 1 nm), metallic
SrTiO 3 quantum wells epitaxially embedded in insulating, ferrimagnetic GdTiO 3 and …

LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile
metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co …