Basic studies of the surface science aspects of plasma-assisted etching were initiated over
10 years ago in laboratories throughout the world. Several approaches to this …

Plasma-induced defects are often recognized in state-of-the-art semiconductors, high-
efficiency solar cells and high-sensitivity image sensors. These defects are in the form of a …

The mechanisms underlying selective etching of a SiO 2 layer over a Si or Si 3 N 4
underlayer, a process of vital importance to modern integrated circuit fabrication technology …

A review of our present understanding of silicon surface modifications resulting from reactive
ion etching (RIE) is presented. The spectroscopic evidence for silicon substrate defects …

The chemical dry etching of silicon nitride (Si3N4) and silicon nitride (SiO2) in a downstream
plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 …

Hemispherical reflectance and internal quantum efficiency (IQE) measurements have been
employed to evaluate the response of Si nanostructured surfaces formed by using reactive …

In situ multiple internal reflection Fourier transform infrared spectroscopy and spectroscopic
ellipsometry are used to study the surfaces of Si and SiO 2 films during etching with CF 4/H 2 …

The nature of extended defects in silicon introduced by hydrogen containing plasmas has
been studied by transmission electron microscopy for a variety of technological processes …

Bach (57) ABSTRACT The invention is embodied in an RF plasma reactor for processing a
Semiconductor workpiece, including wall Struc tures for containing a plasma therein, a …

A picosecond ultrasonics technique has been used to detect interfacial fluorocarbon (CF,)
layers as thin as 0.5 nm between aluminum and silicon. The presence of the CF, material …