[PDF][PDF] Material, structural optimization and analysis of visible-range back-illuminated OPFET photodetector

JV Gaitonde, RB Lohani - Advances in Science, Technology and …, 2019 - academia.edu
High gain-bandwidth product and visible/UV contrast photodetectors are vital in Visible Light
Communication (VLC) and Ultraviolet (UV) reflectance imaging applications respectively …

Comparative analysis of buried-gate GaN OPFET models for UV photodetector applications

JV Gaitonde, SPS Rawat… - 2018 5th IEEE Uttar …, 2018 - ieeexplore.ieee.org
We estimate the UV (Ultraviolet) characteristics of the buried-gate GaN OPFET (Optical Field
Effect Transistor) models and analyze the results based on the photoconductive and the …

Material and illumination model optimization of OPFET for visible light communication

JV Gaitonde, RB Lohani - Optik, 2021 - Elsevier
Through material and illumination model optimization, we seek to investigate the potential of
enhancing the performance of Optical Field Effect Transistor (OPFET)-based detector-cum …

[PDF][PDF] Application-Specific Dual-Mode Buried-Gate GaAs OPFET for Visible-Light Communication

JV Gaitonde, S Fulari, RB Lohani - Proc. International Conference …, 2019 - researchgate.net
Field Effect Transistor (OPFET) for Visible-Light Communication (VLC) which can be
switched to high background light immunity applications or to applications in which the same …

[PDF][PDF] Study of structure and intrinsic stresses of Ge thin films on GaAs

VF Mitin, VV Kholevchuk, VP Kladko… - Proceedings of the …, 2013 - irbis-nbuv.gov.ua
The effect of film growth rate on the structure and intrinsic stresses of thin (100 nm) Ge films
grown on GaAs (100) substrates was investigate by High Resolution X-Ray Diffraction …

[PDF][PDF] Switching Performance of GaAs OPFET

RB Lohani, JV Gaitonde - researchgate.net
Visible-Light Communication (VLC) application such as traffic lighting requires high speed
data transmission wherein at the receiving end, a fast response photodetector should …

Dual-Application-Mode Buried-Gate GaN OPFET for Ultraviolet Communication

JV Gaitonde, RB Lohani - 2019 Innovations in Power and …, 2019 - ieeexplore.ieee.org
Cost and area are important constraints in the sensor industry. In this regard, we adopt a
dual-application-mode buried-gate GaN Optical Field Effect Transistor (OPFET) device for …

Operating Frequency Ranges of GaAs Back-Illuminated OPFET Detector

JV Gaitonde, RB Lohani - 2018 International Conference on …, 2018 - ieeexplore.ieee.org
OPFET (Optical Field Effect Transistor) finds use in optically-controlled applications and as a
photodetector. In this paper, we utilize a partial numerical method to determine the …