Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …

Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

The explosive increase in digital communications in the Big Data and internet of Things era
spurs the development of universal memory that can run at high speed with high-density and …

Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …

Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

To implement artificial neural networks (ANNs) based on memristor devices, it is essential to
secure the linearity and symmetry in weight update characteristics of the memristor, and …

Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …

With the advent of artificial intelligence (AI), memristors have received significant interest as
a synaptic building block for neuromorphic systems, where each synaptic memristor should …

Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …