Impact of bandgap and effective mass on the transport characteristics of tunneling FET

Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities‏

G Nazir, A Rehman, SJ Park - ACS applied materials & interfaces, 2020‏ - ACS Publications‏
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …‏
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Dependency of tunneling field-effect transistor (TFET) characteristics on operation regions‏

MJ Lee, WY Choi - JSTS: Journal of Semiconductor Technology …, 2011‏ - koreascience.kr‏
In this paper, two competing mechanisms determining drain current of tunneling field-effect
transistors (TFETs) have been investigated such as band-to-band tunneling and drift. Based …‏
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A simple physically based model of temperature effect on drain current for nanoscale TFET‏

OF Shoron, SA Siddiqui, A Zubair… - … Conference of Electron …, 2010‏ - ieeexplore.ieee.org‏
Temperature dependency of ballistic double gate tunnel field effect transistors (TFET) have
been examined for the first time using Si and GaAs as channel material. IV characteristics …‏
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Band to Band Tunneling Current of Surface Channel Strained InxGa1-xAs (x= 0.47, 0.65, 0.75) Double Gate Planner TFET‏

SA Siddiqui, OF Shoron, A Zubair… - ECS Transactions, 2011‏ - iopscience.iop.org‏
Band to band tunneling current of strained InxGa1-xAs (x= 0.47, 0.65, 0.75) surface channel
double gate TFET has been calculated using a simple numerical model. This proposed …‏
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