GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device
fabrication. The precise and repeatable replication of nanoscale patterns from a single high …

Green GaInN/GaN quantum well light-emitting diode (LED) wafers were grown on
nanopatterned c-plane sapphire substrate by metal-organic vapor phase epitaxy. Without …

In this paper, we discuss the fabrication of a dielectric photonic crystal (PhC)-based Fano-
filter device, as well as a numerical investigation of its spectral characteristics. The process …

Photon management is essential in improving the performances of optoelectronic devices
including light emitting diodes, solar cells and photo detectors. Beyond the advances in …

In this work, fabrication of a dielectric photonic crystal device and numerical study of its
spectral characteristics as a refractive index sensor are presented for near infrared range …

Compared with conventional anti-reflective film, an anti-reflective sub-wavelength surface
structure provides an ideal choice for a sapphire optical window especially in harsh …

Highly transparent and superhydrophilic sapphire with surface antireflective subwavelength
structures were prepared by wet etching using colloidal monolayer silica masks. The film …

We develop a facile route to the scalable fabrication of flexible reattachable ionomer
nanopatterns (RAINs) by continuous nanoinscribing and low-temperature roll imprinting …

Abstract Gallium oxide (Ga 2 O 3) and gallium nitride (GaN) are fourth-and third-generation
semiconductor materials, respectively. Their heterogeneous structure (lattice mismatch of …