Radiation effects in advanced multiple gate and silicon-on-insulator transistors

E Simoen, M Gaillardin, P Paillet… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
The aim of this review paper is to describe in a comprehensive manner the current
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …

Radiation effects in a post-Moore world

DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation

G Hubert, L Artola, D Regis - Integration, 2015 - Elsevier
This paper investigates the impact of terrestrial radiation on soft error (SE) sensitivity along
the very large-scale integration (VLSI) roadmap of bulk, FDSOI and finFET nano-scale …

Ionizing Radiation Effectsin Electronics

M Bagatin, S Gerardin - 2016 - api.taylorfrancis.com
There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …

Modeling single event transients in advanced devices and ICs

L Artola, M Gaillardin, G Hubert… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
The ability for Single Event Transients (SETs) to induce soft errors in Integrated Circuits (ICs)
was predicted for the first time by Wallmark and Marcus in the early 60's and was confirmed …

[書籍][B] Soft Errors: from particles to circuits

JL Autran, D Munteanu - 2017 - books.google.com
Soft errors are a multifaceted issue at the crossroads of applied physics and engineering
sciences. Soft errors are by nature multiscale and multiphysics problems that combine not …

Physical processes and applications of the Monte Carlo radiative energy deposition (MRED) code

RA Reed, RA Weller, MH Mendenhall… - … on Nuclear Science, 2015 - ieeexplore.ieee.org
MRED is a Python-language scriptable computer application that simulates radiation
transport. It is the computational engine for the on-line tool CRÈME-MC. MRED is based on …

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti …

Q Gibaru, C Inguimbert, P Caron, M Raine… - Nuclear Instruments and …, 2021 - Elsevier
Several improvements are added to the MicroElec extension of Geant4 in order to track very
low energy electrons, protons and ions in different materials. The interaction processes for …

Electron-induced single-event upsets in static random access memory

MP King, RA Reed, RA Weller… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
We present experimental evidence of single-event upsets in 28 and 45 nm CMOS SRAMs
produced by single energetic electrons. Upsets are observed within 10% of nominal supply …

Single-event transient modeling in a 65-nm bulk CMOS technology based on multi-physical approach and electrical simulations

G Hubert, L Artola - IEEE Transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
This paper presents a SET predictive methodology based on coupled MUSCA SEP3 and
electrical simulations (CADENCE tool). The method is validated by SET measurements on …