Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Effects of bias and temperature on interface-trap annealing in MOS and linear bipolar devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2022 - ieeexplore.ieee.org
This article reviews the effects of applied bias and temperature on Si/SiO 2 interface-trap
buildup and annealing rates. Electrical and spectroscopic methods are described to …
buildup and annealing rates. Electrical and spectroscopic methods are described to …
Radiation effects in a post-Moore world
DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …
effects on microelectronics, focusing on historical trends and future needs. A number of …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
TID degradation mechanisms in 16-nm bulk FinFETs irradiated to ultrahigh doses
T Ma, S Bonaldo, S Mattiazzo… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
Design and Optimization of MOS Capacitor based Radiation Sensor for Space Applications
This paper proposes a unique sensor for detecting total ionizing dose (TID) on metal–oxide–
semiconductor (MOS) devices. The proposed capacitive radiation sensor is based on …
semiconductor (MOS) devices. The proposed capacitive radiation sensor is based on …
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
Innovative leakage stabilization system for mitigation of ionizing radiation-induced effects
In this letter, a novel radiation leakage stabilization circuit (LSC) using Semi-Conductor
Laboratory (SCL) 180-nm metal oxide semiconductor capacitor technology-based ionizing …
Laboratory (SCL) 180-nm metal oxide semiconductor capacitor technology-based ionizing …