Research Progress in Composite Materials for Photocatalytic Nitrogen Fixation

C Zuo, Q Su, L Yu - Molecules, 2023 - mdpi.com
Ammonia is an essential component of modern chemical products and the building unit of
natural life molecules. The Haber–Bosch (HB) process is mainly used in the ammonia …

Symmetry Breaking and Spin–Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS2 Monolayers

T Aliyar, H Ma, R Krishnan, G Singh, BQ Chong… - Nano Letters, 2024 - ACS Publications
Spins confined to point defects in atomically thin semiconductors constitute well-defined
atomic-scale quantum systems that are being explored as single-photon emitters and spin …

Edge-dominated hydrogen evolution reactions in ultra-narrow MoS 2 nanoribbon arrays

DR Chen, J Muthu, XY Guo, HT Chin, YC Lin… - Journal of Materials …, 2023 - pubs.rsc.org
Future energy generation and storage requirements emphasize the importance of high-
performance electrocatalysis. MoS2 edges exhibit ideal energetics for hydrogen evolution …

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

M Cowie, PC Constantinou, NJ Curson… - Proceedings of the …, 2024 - pnas.org
We use electrostatic force microscopy to spatially resolve random telegraph noise at the
Si/SiO2 interface. Our measurements demonstrate that two-state fluctuations are localized at …

Enhanced Emission from Defect Levels in Multilayer MoS2

Y Lin, E Hathaway, F Habis, Y Wang… - Advanced Optical …, 2022 - Wiley Online Library
Realizing stimulated emission from defects in 2D‐layered semiconductors has the potential
to enhance the sensitivity of characterizing their defects. However, stimulated emission from …

Spatially Resolved Dielectric Loss at the Interface

M Cowie, TJZ Stock, PC Constantinou, NJ Curson… - Physical Review Letters, 2024 - APS
The Si/SiO 2 interface is populated by isolated trap states that modify its electronic
properties. These traps are of critical interest for the development of semiconductor-based …

Reversal of charge transfer do** on the negative electronic compressibility surface of MoS2

L Watson, I Di Bernardo, J Blyth, B Lowe… - 2D …, 2025 - iopscience.iop.org
The strong electron-electron interaction in transition metal dichalcogenides (TMDs) gives
rise to phenomena such as strong exciton and trion binding and excitonic condensation, as …

Defect-induced do** and chemisorption of O2 in Se deficient GaSe monolayers

J Bradford, K Rahman, J Felton, TS Cheng… - 2D …, 2024 - iopscience.iop.org
Owing to their atomically thin nature, structural defects in two-dimensional materials often
play a dominating role in their electronic and optical properties. Here, we grow epitaxial …