By measuring the substrate current under the forward bias of source/drain-substrate
junction, a multiregion direct current current-voltage (MR-DCIV) technique is used to …

A physics-based model has been implemented to describe the low-frequency noise
behavior in differently processed reduced-surface-field lateral double-diffused MOS devices …

Drain-extended MOSFET (DEMOS) with halo implant induced laterally asymmetric channel
do** shows anomalous characteristics across bias and temperature that cannot be …

The effect of drift region on the flicker noise in LDMOS devices in the linear and saturation
regions is analyzed using measured data and device simulations. In the linear region, noise …

Acknowledgements All praises be to the almighty Allah. My sincere gratitude goes to my
advisor, Prof. Zeynep Çelik-Butler for her outstanding contribution towards my research. She …

This paper investigates 1/f noise behavior under low and high drain biases of high-voltage
metal-oxide-semiconductor field-effect transistors (MOSFETs)(HV-MOSFETs). A dedicated …

In this work we analyse the applicability of low-frequency (LF) noise measurement in order
to study the defectiveness in the gate oxide of power MOSFETs (Metal–Oxide …

An analytical model of flicker noise (also called 1/f or low frequency noise) for the drift region
is developed to formulate a 1/f model for high voltage MOSFETs using the sub-circuit …

A 1/f noise parameter extraction method for high-voltage (HV-) MOSFETs at 3V drain bias is
presented in this paper. In this region the overall noise is mostly dominated by the noise …

The physical origin of majority charge carrier fluctuations in the SiO 2 interface of Si at
accumulation has been investigated and analyzed for differently processed and voltage …