Cerium oxide nanoparticles (CeNPs) are versatile materials with unique and unusual
properties that vary depending on their surface chemistry, size, shape, coating, oxidation …

Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …

A series of Ce 1-x M x O 2 abrasives with different types and amounts of do** were
prepared by molten salt method. The properties of abrasives were characterized in detail by …

The dispersion stability of alumina suspensions is an obstacle to its large-scale application
for chemical mechanical polishing (CMP) since the aggregation of particles will cause …

Develo** an affordable and efficient electrocatalyst for bifunctional activity is crucial for the
advancement of water electrolysis technology. Do** with foreign atoms in electrocatalysts …

Cerium oxide is the main abrasive used in the chemical mechanical polishing (CMP)
process of shallow trench isolation (STI) in integrated circuit manufacturing. It is widely …

Nanostructured metal oxides have gained significant attraction in the field of gas sensors
because of their size-dependent, superior catalytic capabilities with better gas adsorption …

Cerium oxide nanoparticles in the size of Ca. 100 nm usually have a degree of crystallinity
over 95% and the ratio of Ce3+/Ce4+ at around 40%, which are ascribed to the intrinsic …

The importance of chemical mechanical planarization (CMP) and post-CMP cleaning is
highly critical because both directly affect the yields and performance of semiconductor …