A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Silicon photonics has been an area of active research and development. Researchers have
been working on enhancing the integration density and intricacy of silicon photonic circuits …

The GeSn detector offers high-performance Si-based infrared photodetectors with
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …

Normal-incidence Ge_1-xSn_x photodiode detectors with Sn compositions of 7 and 10%
have been demonstrated. Such detectors were based on Ge/Ge_1-xSn_x/Ge double …

We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge
multiple-quantum-well (MQW) pin photodiode, exhibiting a 3-dB bandwidth (f3-dB) above 10 …

Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …

High–speed, high–power photodiodes play a key role in wireless communication systems
for the generation of millimeter wave (MMW) and terahertz (THz) waves based on photonics …

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …

We report the demonstration of a germanium-tin (Ge_0. 9Sn_0. 1) multiple-quantum-well pin
photodiode on silicon (Si) substrate for 2 μm-wavelength light detection. Characterization of …

We reported an investigation of GeSn-based pin photodetectors (PDs) with a Ge 0.92 Sn
0.08 active layer grown on n-type Si (100) substrate using molecular beam epitaxy (MBE) …