Disentangling the impact of point defect density and carrier localization-enhanced auger recombination on efficiency droop in (In, Ga) N/GaN quantum wells
RM Barrett, JM McMahon, R Ahumada-Lazo… - ACS …, 2023 - ACS Publications
The internal quantum efficiency of (In, Ga) N/GaN quantum wells can surpass 90% for blue-
emitting structures at moderate drive current densities but decreases significantly for longer …
emitting structures at moderate drive current densities but decreases significantly for longer …
Carrier density dependent Auger recombination in c-plane (In, Ga) N/GaN quantum wells: insights from atomistic calculations
JM McMahon, E Kioupakis… - Journal of Physics D …, 2023 - iopscience.iop.org
Abstract Understanding Auger recombination in (In, Ga) N-based quantum wells is of central
importance to unravelling the experimentally observed efficiency'droop'in modern (In, Ga) N …
importance to unravelling the experimentally observed efficiency'droop'in modern (In, Ga) N …
[PDF][PDF] Theory of radiative and nonradiative recombination processes in
JM McMahon - 2023 - cora.ucc.ie
Most modern blue-violet short wavelength visible light-emitting diodes (LEDs) incorporate
group III-nitride (III-N) semiconductor quantum wells (QWs), and ultraviolet (UV) LEDs could …
group III-nitride (III-N) semiconductor quantum wells (QWs), and ultraviolet (UV) LEDs could …
Carrier Dynamics in Novel GaN Epilayers InGaN/GaN Quantum Wells and MicroLEDs
D Dyer - 2022 - search.proquest.com
The work presented in this thesis investigates the carrier dynamics in novel GaN epilayers,
InGaN/GaN quantum wells (QWs) and microLEDs. These novel materials have the potential …
InGaN/GaN quantum wells (QWs) and microLEDs. These novel materials have the potential …