Engineering strained silicon on insulator wafers with the Smart CutTM technology
B Ghyselen, JM Hartmann, T Ernst, C Aulnette… - Solid-state …, 2004 - Elsevier
Strained silicon on insulator wafers are today envisioned as a natural and powerful
enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is …
enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is …
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
A method to obtain thin (< 300 nm) strain-relaxed Si 1-x Ge x buffer layers on Si or silicon-on-
insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit …
insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit …
Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic buffer layers on Si (100) substrates
M Luysberg, D Kirch, H Trinkaus, B Holländer… - Journal of applied …, 2002 - pubs.aip.org
The influence of He implantation and annealing on the relaxation of Si 0.7 Ge 0.3 layers on
Si (100) substrates is investigated. Proper choice of the implantation energy results in a …
Si (100) substrates is investigated. Proper choice of the implantation energy results in a …
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
A method of fabricating relaxed SiGe buffer layers with low threading dislocation densities
on silicon-on-insulator (SOI) substrates is provided. The relaxed SiGe buffer layers are …
on silicon-on-insulator (SOI) substrates is provided. The relaxed SiGe buffer layers are …
Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study
The properties of nanometric-sized helium bubbles in silicon have been investigated using
both spatially resolved electron-energy-loss spectroscopy combined with a recently …
both spatially resolved electron-energy-loss spectroscopy combined with a recently …
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
A method to obtain thin (< 300 nm) strain-relaxed Si 1− x Ge x buffer layers on Si or silicon-
on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit …
on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit …
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
B Ghyselen, C Mazure, E Arene - US Patent 7,018,909, 2006 - Google Patents
The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a
substrate, wherein the relaxed layer may be a semiconductor material. An implementation of …
substrate, wherein the relaxed layer may be a semiconductor material. An implementation of …
[HTML][HTML] Molecular dynamics simulation on the effect of dislocation structures on the retention and distribution of helium ions implanted into silicon
To investigate the effect of dislocation structures on the initial formation stage of helium
bubbles, molecular dynamics (MD) simulations were used in this study. The retention rate …
bubbles, molecular dynamics (MD) simulations were used in this study. The retention rate …
Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer
B Ghyselen, C Aulnette, B Osternaud, T Akatsu… - US Patent …, 2007 - Google Patents
The invention relates to a method of transferring useful layers from a donor wafer which
includes a multi-layer structure on the surface of the donor wafer that has a thickness …
includes a multi-layer structure on the surface of the donor wafer that has a thickness …
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
(54) METHOD FOR FABRICATION OF RELAXED 5,891,769 A 4/1999 Law et al. SIGE
BUFFER LAYERS ON SILICON-ON- 6,039,803 A 3/2000 Fitzgerald et al. INSULATORS …
BUFFER LAYERS ON SILICON-ON- 6,039,803 A 3/2000 Fitzgerald et al. INSULATORS …