Superhydrophobic copper surfaces with anticorrosion properties fabricated by solventless CVD methods
I Vilaró, JL Yagüe, S Borrós - ACS applied materials & interfaces, 2017 - ACS Publications
Due to continuous miniaturization and increasing number of electrical components in
electronics, copper interconnections have become critical for the design of 3D integrated …
electronics, copper interconnections have become critical for the design of 3D integrated …
Barrier properties of very thin Ta and TaN layers against copper diffusion
MT Wang, YC Lin, MC Chen - Journal of the Electrochemical …, 1998 - iopscience.iop.org
Diffusion barrier properties of very thin sputtered Ta and reactively sputtered TaN films used
as a barrier layer between Cu and Si substrates were investigated using electrical …
as a barrier layer between Cu and Si substrates were investigated using electrical …
Dielectric properties of industrial polymer composite materials
M Akram, A Javed, TZ Rizvi - Turkish Journal of Physics, 2005 - journals.tubitak.gov.tr
Frequency and temperature dependence of dielectric constant\varepsilon'and dielectric
loss\varepsilon" in pure polyester resin and polymer composites with various types of glass …
loss\varepsilon" in pure polyester resin and polymer composites with various types of glass …
Preparation of thin copper films from the vapour phase of volatile copper (I) and copper (II) derivatives by the CVD method
VN Vertoprakhov, SA Krupoder - Russian Chemical Reviews, 2000 - pubs.rsc.org
The main chemical aspects of the preparation of thin copper films from the vapour of
monovalent and divalent copper derivatives as precursors in the CVD technique are …
monovalent and divalent copper derivatives as precursors in the CVD technique are …
Reactive preclean prior to metallization for sub-quarter micron application
S Subrahmanyan, LY Chen, RC Mosely - US Patent 6,107,192, 2000 - Google Patents
The present invention generally provides a precleaning process prior to metallization for
submicron features on substrates. The method includes cleaning the submicron features …
submicron features on substrates. The method includes cleaning the submicron features …
[HTML][HTML] Dielectric properties and AC conductivity of epoxy/alumina silicate NGK composites
Alumina silicate powder which is extracted from the obsolete spark plug NGK (insulator part
as a filler) has been used to produce epoxy/alumina silicate composite. The dielectric …
as a filler) has been used to produce epoxy/alumina silicate composite. The dielectric …
Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing
MT Wang, MS Tsai, C Liu, WT Tseng, TC Chang… - Thin Solid Films, 1997 - Elsevier
Copper chemical mechanical polishing (Cu-CMP) was investigated using slurries containing
alumina abrasive and various types and concentrations of oxidizer, as well as …
alumina abrasive and various types and concentrations of oxidizer, as well as …
Self-powered visualization system by conjunction of photovoltaic effect and contact-electrification
L Han, X Zhao, M Ma, F Gao, X Xun, Q Liao, Z Zhang… - Nano Energy, 2019 - Elsevier
Nanosensors play an irreplaceable role in environmental and health monitoring fields.
Single-function sensor can't meet the application requirements of increasingly complicated …
Single-function sensor can't meet the application requirements of increasingly complicated …
Electrical properties of Ta2O5 thin films deposited on Cu
S Ezhilvalavan, TY Tseng - Thin Solid Films, 2000 - Elsevier
The electrical and dielectric properties of reactively sputtered Ta2O5 thin films with Cu as the
top and bottom electrodes forming a simple metal insulator metal (MIM) structure …
top and bottom electrodes forming a simple metal insulator metal (MIM) structure …
Metal drift induced electrical instability of porous low dielectric constant film
Nano-porous carbon doped oxide (CDO) is one of the potential low dielectric constant (low-
k) materials that can achieve a dielectric constant as low as 2.2 and is expected to be …
k) materials that can achieve a dielectric constant as low as 2.2 and is expected to be …