Remote epitaxy is an emerging technology for producing single-crystalline, free-standing
thin films and structures. The method uses 2D van der Waals materials as semi-transparent …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …

Recent development of technology and understanding of the growth mechanism in
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …

The annealing of an AlN buffer layer in a carbon-saturated N 2–CO gas on a sapphire
substrate was investigated. The crystal quality of the buffer layer was significantly improved …

The p–n junction was invented in the first half of the twentieth century and the latter half saw
the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s …

Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …