Design of nitride semiconductors for solar energy conversion

A Zakutayev - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Nitride semiconductors are a promising class of materials for solar energy conversion
applications, such as photovoltaic and photoelectrochemical cells. Nitrides can have better …

InGaN solar cells: present state of the art and important challenges

AG Bhuiyan, K Sugita, A Hashimoto… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
Solar cells are a promising renewable and carbon-free electric energy resource to address
the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have …

InGaN micro‐LED array enabled advanced underwater wireless optical communication and underwater charging

R Lin, X Liu, G Zhou, Z Qian, X Cui… - Advanced optical …, 2021 - Wiley Online Library
In this paper, the underwater applications of micro‐LED (light‐emitting diode) in light
emission, optical detection, and solar cell are demonstrated. Based on a high‐bandwidth …

On the search for efficient solid state light emitters: Past, present, future

C Weisbuch - ECS Journal of Solid State Science and …, 2019 - iopscience.iop.org
The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …

[PDF][PDF] Structural and optoelectronic characterization of RF sputtered ZnSnN2

L Lahourcade, NC Coronel, KT Delaney… - Adv …, 2013 - daedalus.caltech.edu
Terawatt-scale energy demands motivate the investigation of new visible-range direct
bandgap semiconductor materials that are abundant and low-cost. Here we demonstrate …

GaN/graphene heterostructures as promising anode materials for Li-ion batteries

J Wu, B Liu, X **a, Z Wang, Y Zhang, S Huang - Surfaces and Interfaces, 2023 - Elsevier
In this research, the properties of GaN monolayer, defective GaN monolayer with N
vacancies (GaN-V N), and van der Waals (vdW) heterostructures composed of them and …

The efficiency challenge of nitride light‐emitting diodes for lighting

C Weisbuch, M Piccardo, L Martinelli… - … status solidi (a), 2015 - Wiley Online Library
We discuss the challenges of light‐emitting diodes in view of their application to solid‐state
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …

The current and emerging applications of the III-nitrides

C Zhou, A Ghods, VG Saravade, PV Patel… - ECS Journal of Solid …, 2017 - iopscience.iop.org
III-Nitrides are attracting considerable attention as promising materials for a wide variety of
applications due to their wide coverage of direct bandgap range, high electron mobility, high …

Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting

R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

Bandgap energy bowing parameter of strained and relaxed InGaN layers

G Orsal, Y El Gmili, N Fressengeas, J Streque… - Optical Materials …, 2014 - opg.optica.org
This paper focuses on the determination of the bandgap energy bowing parameter of
strained and relaxed InxGa_1− xN layers. Samples are grown by metal organic vapor phase …