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2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …
discovered through the extensive experimental and theoretical efforts of chemists, material …
Nanowires for UV–vis–IR optoelectronic synaptic devices
X Chen, B Chen, B Jiang, T Gao… - Advanced Functional …, 2023 - Wiley Online Library
Simulating biological synaptic functionalities through artificial synaptic devices opens up an
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …
Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation
Broadband photodetectors are of great importance for numerous optoelectronic
applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of …
applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of …
Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction
Group‐10 layered transitional metal dichalcogenides including PtS2, PtSe2, and PtTe2 are
excellent potential candidates for optoelectronic devices due to their unique properties such …
excellent potential candidates for optoelectronic devices due to their unique properties such …
Review on III–V semiconductor nanowire array infrared photodetectors
In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …
photodetector applications due to their direct and suitable bandgap, unique optical and …
The physics and chemistry of graphene-on-surfaces
Graphene has demonstrated great potential in next-generation electronics due to its unique
two-dimensional structure and properties including a zero-gap band structure, high electron …
two-dimensional structure and properties including a zero-gap band structure, high electron …
Recent developments in the photodetector applications of Schottky diodes based on 2D materials
In recent years, 2D layered materials have emerged as potential candidates in the opto-
electronic field due to their intriguing optical, electrical and mechanical properties …
electronic field due to their intriguing optical, electrical and mechanical properties …
Graphene hybrid structures for integrated and flexible optoelectronics
X Chen, K Shehzad, L Gao, M Long, H Guo… - Advanced …, 2020 - Wiley Online Library
Graphene (Gr) has many unique properties including gapless band structure, ultrafast
carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast …
carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast …
Graphene/semiconductor hybrid heterostructures for optoelectronic device applications
As one of the most appealing two-dimensional materials, graphene (Gr) has attracted
tremendous research interest in optoelectronic device applications for its plenty of …
tremendous research interest in optoelectronic device applications for its plenty of …
Highly sensitive, ultrafast, and broadband photo‐detecting field‐effect transistor with transition‐metal dichalcogenide van der Waals heterostructures of MoTe2 and …
Recently, van der Waals heterostructures (vdWHs) based on transition‐metal
dichalcogenides (TMDs) have attracted significant attention owing to their superior …
dichalcogenides (TMDs) have attracted significant attention owing to their superior …