2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Nanowires for UV–vis–IR optoelectronic synaptic devices

X Chen, B Chen, B Jiang, T Gao… - Advanced Functional …, 2023 - Wiley Online Library
Simulating biological synaptic functionalities through artificial synaptic devices opens up an
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …

Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

D Wu, J Guo, C Wang, X Ren, Y Chen, P Lin, L Zeng… - ACS …, 2021 - ACS Publications
Broadband photodetectors are of great importance for numerous optoelectronic
applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of …

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

LH Zeng, SH Lin, ZJ Li, ZX Zhang… - Advanced Functional …, 2018 - Wiley Online Library
Group‐10 layered transitional metal dichalcogenides including PtS2, PtSe2, and PtTe2 are
excellent potential candidates for optoelectronic devices due to their unique properties such …

Review on III–V semiconductor nanowire array infrared photodetectors

Z Li, Z He, C **, F Zhang, L Huang, Y Yu… - Advanced Materials …, 2023 - Wiley Online Library
In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

The physics and chemistry of graphene-on-surfaces

G Zhao, X Li, M Huang, Z Zhen, Y Zhong… - Chemical Society …, 2017 - pubs.rsc.org
Graphene has demonstrated great potential in next-generation electronics due to its unique
two-dimensional structure and properties including a zero-gap band structure, high electron …

Recent developments in the photodetector applications of Schottky diodes based on 2D materials

B Ezhilmaran, A Patra, S Benny… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, 2D layered materials have emerged as potential candidates in the opto-
electronic field due to their intriguing optical, electrical and mechanical properties …

Graphene hybrid structures for integrated and flexible optoelectronics

X Chen, K Shehzad, L Gao, M Long, H Guo… - Advanced …, 2020 - Wiley Online Library
Graphene (Gr) has many unique properties including gapless band structure, ultrafast
carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast …

Graphene/semiconductor hybrid heterostructures for optoelectronic device applications

C **e, Y Wang, ZX Zhang, D Wang, LB Luo - Nano Today, 2018 - Elsevier
As one of the most appealing two-dimensional materials, graphene (Gr) has attracted
tremendous research interest in optoelectronic device applications for its plenty of …

Highly sensitive, ultrafast, and broadband photo‐detecting field‐effect transistor with transition‐metal dichalcogenide van der Waals heterostructures of MoTe2 and …

AM Afzal, MZ Iqbal, G Dastgeer, A Ahmad… - Advanced …, 2021 - Wiley Online Library
Recently, van der Waals heterostructures (vdWHs) based on transition‐metal
dichalcogenides (TMDs) have attracted significant attention owing to their superior …