Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to
overcome the intrinsic energy and speed issues of traditional von Neumann based …

Neuromorphic devices are among the most emerging electronic components to realize
artificial neural systems and replace traditional complementary metal–oxide semiconductor …

Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …

Memristors, owing to their uncomplicated structure and resemblance to biological synapses,
are predicted to see increased usage in the domain of artificial intelligence. Additionally, to …

HfO 2-based resistive switching memory (RRAM) combines several outstanding properties,
such as high scalability, fast switching speed, low power, compatibility with complementary …

In this work, a reliable bilayer flexible memristor is demonstrated using TaOx/HfOx Bi‐layer
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …

Nanocomposites based on biomaterials are promising candidates for emerging green‐
electronics benefiting from environment‐friendly, renewable, biocompatible, and …