In this article, we present a symmetric surface-potential-based model for dynamic depletion
(DD) device operation of silicon-on-insulator (SOI) FETs for RF and analog IC design …

The paper describes the implementation of a bandgap reference based on native‐MOSFET
transistors for low‐power sensor node applications. The circuit can operate from− 55° C to …

In this paper, we present a charge-based compact model for transition metal dichalcogenide
(TMD)-based thin-channel field-effect transistor. In model development, first, charge …

Quantum effects play a dominant role in nanometric structures for which we need to use new
methods to describe this phenomenon in device characterizations. In this paper an …

In this part, we present a new charge-based symmetric compact model of partially depleted
silicon-on-insulator (PDSOI) technology. The model's core charge calculations are based on …

The physical models of MOS transistors used in the design of modern integrated circuits are
accurate, which makes it possible to simulate their operation with the given degree of …

With the aim of defining a Quantum Systems Engineering paradigm, we show that the
systems engineering of quantum technologies is materially different from systems …

Физические модели МОП-транзисторов, применяемые при проектировании
современных интегральных микросхем, характеризуются точностью, что позволяет с …

Физические модели МОП-транзисторов, применяемые при проектировании
современных интегральных микросхем, характеризуются точностью, что позволяет с …