Thin film transistor array panel
US9099438B2 - Thin film transistor array panel - Google Patents US9099438B2 - Thin film
transistor array panel - Google Patents Thin film transistor array panel Download PDF Info …
transistor array panel - Google Patents Thin film transistor array panel Download PDF Info …
Thin film transistor array panel and method of manufacturing the same
SII Choi, SG Kim, HS Kong, SB Bae, Y Jeong - US Patent 8,921,852, 2014 - Google Patents
US8921852B2 - Thin film transistor array panel and method of manufacturing the same -
Google Patents US8921852B2 - Thin film transistor array panel and method of …
Google Patents US8921852B2 - Thin film transistor array panel and method of …
Manufacturing method of thin-film transistor array substrate and thin-film transistor array substrate thereof
J Park, S Kim, K Shin, C Chai - US Patent App. 14/927,269, 2016 - Google Patents
Provided is a method of manufacturing TFT substrate, the method including: forming a first
conductive layer and a gate electrode; forming a gate insulating layer covering the first …
conductive layer and a gate electrode; forming a gate insulating layer covering the first …
Thin film transistor array panel and method of manufacturing the same
HJ Kang, DH Lee, GM Cha, SW Shin… - US Patent App. 15 …, 2017 - Google Patents
(57) ABSTRACT A thin film transistor array panel that includes: a Substrate; a gate electrode
disposed on the Substrate; a semiconductor layer disposed on the Substrate; a gate …
disposed on the Substrate; a semiconductor layer disposed on the Substrate; a gate …
Thin-film transistor array substrate having oxide semiconductor with channel region between conductive regions
J Park, S Kim, K Shin, C Chai - US Patent 9,893,092, 2018 - Google Patents
Provided is a method of manufacturing TFT substrate, the method including: forming a first
conductive layer and a gate electrode; forming a gate insulating layer covering the first …
conductive layer and a gate electrode; forming a gate insulating layer covering the first …
Thin film transistors with spacer controlled gate length
AA Sharma, VH Le, G Dewey, S Shivaraman… - US Patent …, 2024 - Google Patents
Embodiments herein describe techniques for a semiconductor device including a TFT
having a gate electrode with a gate length determined by a spacer. Embodiments may …
having a gate electrode with a gate length determined by a spacer. Embodiments may …
Thin film transistor with insulating portion between source/drian electrode and gate insulating layer, and manufacturing method thereof
K Park - US Patent 11,784,258, 2023 - Google Patents
A thin film transistor, a manufacturing method thereof, an array substrate, and a display
device are provided. The thin film transistor comprises a base substrate, a gate on the base …
device are provided. The thin film transistor comprises a base substrate, a gate on the base …
Thin film transistors with spacer controlled gate length
AA Sharma, VH Le, G Dewey, S Shivaraman… - US Patent …, 2022 - Google Patents
Embodiments herein describe techniques for a semiconduc tor device including a TFT
having a gate electrode with a gate length determined by a spacer. Embodiments may …
having a gate electrode with a gate length determined by a spacer. Embodiments may …
Thin film transistor and method for fabricating the same, array substrate and display device
C Jiang, X Li, W Liu, ZHU **aming - US Patent 10,256,315, 2019 - Google Patents
(57) ABSTRACT A thin film transistor, a method for fabricating the same, an array substrate,
and a display device are provided. The thin film transistor comprises a copper gate, a gate …
and a display device are provided. The thin film transistor comprises a copper gate, a gate …
Thin film transistor display panel
B Du Ahn, JH Lim, JH Lim, DH Kim, JH Kim… - US Patent …, 2016 - Google Patents
A thin film transistor display panel a includes a transparent substrate; a gate electrode
positioned on the substrate; a gate insulating layer positioned on the gate electrode; a …
positioned on the substrate; a gate insulating layer positioned on the gate electrode; a …