III-Nitride nanowire optoelectronics
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …
intensively studied in the past decade. Unique to this material system is that its energy …
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
III‐Nitride micro‐LEDs for efficient emissive displays
Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …
efficiency, and large color gamut, are of great interest for applications such as watches …
Nonpolar InGaN/GaN core–shell single nanowire lasers
We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pum** at room temperature. The nanowire lasers were …
nanowire lasers by optical pum** at room temperature. The nanowire lasers were …
Nanowire heterostructures
The nanoscale diameter and high aspect ratio of nanowires are the foundation of fascinating
structure-property relationships derived from confinement, interface effects, and mechanical …
structure-property relationships derived from confinement, interface effects, and mechanical …
Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications.
Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire
substrate through controlled nanowire coalescence by selective-area epitaxy. The …
substrate through controlled nanowire coalescence by selective-area epitaxy. The …
High-speed GaN/GaInN nanowire array light-emitting diode on silicon (111)
R Koester, D Sager, WA Quitsch, O Pfingsten… - Nano …, 2015 - ACS Publications
The high speed on–off performance of GaN-based light-emitting diodes (LEDs) grown in c-
plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric …
plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric …
Correlated atom probe tomography, cross-sectional scanning transmission electron
microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN …
microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN …