We present a comprehensive, up-to-date compilation of band parameters for the
technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs …

We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

The macroscopic nonlinear pyroelectric polarization of wurtzite Al x Ga 1-x N, In x Ga 1-x N
and Al x In 1-x N ternary compounds (large spontaneous polarization and piezoelectric …

We report on the current properties of Al 1− x In x N (x≈ 0.18) layers lattice-matched (LM) to
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …

We report on the growth by metalorganic vapor phase epitaxy of high-quality Al 1− x In x N
layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a …

A detailed understanding of the nitride refractive indices is essential for the modeling and
design of III–N laser structures. In this article, we report on the assessment of the refractive …

First-principles pseudopotential plane-wave calculations are used to investigate the
electronic, structural, and thermodynamic properties of cubic nitride alloys In x Ga 1− x N …

First-principles calculations, by means of the full-potential augmented plane wave method
using the local density approximation, were carried out for the structural and electronic …

We propose to use lattice‐matched AlInN/GaN to replace the Al (Ga) N/GaN material system
for III‐nitride Bragg reflectors, despite the poor material quality of AlInN reported until very …

In x Al 1− x N films were heteroepitaxially grown on Al N∕ Al 2 O 3 (0001) templates by
molecular beam epitaxy. The compositions studied spanned the whole ternary range. The …