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Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Ferroelectricity in Simple Binary ZrO2 and HfO2
J Muller, TS Boscke, U Schroder, S Mueller… - Nano …, 2012 - ACS Publications
The transition metal oxides ZrO2 and HfO2 as well as their solid solution are widely
researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal …
researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal …
Towards an ideal high-κ HfO 2–ZrO 2-based dielectric
The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution
thin films has been predicted; if it exists, it provides a new path toward an ideal silicon …
thin films has been predicted; if it exists, it provides a new path toward an ideal silicon …
Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric
Engineering of HfO2–ZrO2 ferroelectric thin films can substantially increase their dielectric
constant. Here, we investigate dielectric and structural properties of∼ 10 nm thin films …
constant. Here, we investigate dielectric and structural properties of∼ 10 nm thin films …
A CMOS-compatible morphotropic phase boundary
Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric
responses, which have practical applications. The predicted existence of MPB in HfO 2–ZrO …
responses, which have practical applications. The predicted existence of MPB in HfO 2–ZrO …
Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method
VV Atuchin, MS Lebedev, IV Korolkov… - Journal of Materials …, 2019 - Springer
The optical quality Hf x Ti 1− x O 2 films with a wide range of the Hf/Ti ratio were prepared on
Si (100) substrates by the ALD method with the use of tetrakis (ethylmethylamido) hafnium …
Si (100) substrates by the ALD method with the use of tetrakis (ethylmethylamido) hafnium …
Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements
The determination of the valence band offset (VBO) by x-ray photoelectron spectroscopy
(XPS) is commonly performed using the so-called Kraut's method that was developed for …
(XPS) is commonly performed using the so-called Kraut's method that was developed for …
Multifunctional role of dysprosium in HfO 2: stabilization of the high temperature cubic phase, and magnetic and photoluminescence properties
Hafnium oxide (HfO2) can exist in different crystalline structures such as monoclinic at room
temperature, tetragonal at 1700° C and cubic at 2600° C. In the present study …
temperature, tetragonal at 1700° C and cubic at 2600° C. In the present study …
Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties
Gd2O3 and Dy2O3 thin films were grown by atomic layer deposition (ALD) on Si (100)
substrates using the homoleptic rare earth guanidinate based precursors, namely, tris (N …
substrates using the homoleptic rare earth guanidinate based precursors, namely, tris (N …