[HTML][HTML] Production and processing of graphene and related materials
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …
and related materials (GRMs), as well as the key characterization procedures. We adopt …
Direct view of hot carrier dynamics in graphene
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum
and plays a central role for many electronic and optoelectronic applications. Harvesting …
and plays a central role for many electronic and optoelectronic applications. Harvesting …
Giant Faraday rotation in single-and multilayer graphene
The rotation of the polarization of light after passing a medium in a magnetic field,
discovered by Faraday, is an optical analogue of the Hall effect, which combines sensitivity …
discovered by Faraday, is an optical analogue of the Hall effect, which combines sensitivity …
Origin of do** in quasi-free-standing graphene on silicon carbide
J Ristein, S Mammadov, T Seyller - Physical review letters, 2012 - APS
We explain the robust p-type do** observed for quasi-free-standing graphene on
hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism …
hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism …
The quasi-free-standing nature of graphene on H-saturated SiC (0001)
We report on an investigation of quasi-free-standing graphene on 6H-SiC (0001) which was
prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption …
prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption …
Intrinsic terahertz plasmons and magnetoplasmons in large scale monolayer graphene
We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into
a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as …
a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as …
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC (0001)
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001) -
IOPscience Skip to content IOP Science home Accessibility Help Search Journals Journals list …
IOPscience Skip to content IOP Science home Accessibility Help Search Journals Journals list …
Highly p-doped epitaxial graphene obtained by fluorine intercalation
We present a method for decoupling epitaxial graphene grown on SiC (0001) by
intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a …
intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a …
Proximity-induced gap opening by twisted plumbene in epitaxial graphene
Besides graphene, further honeycomb 2D structures were successfully synthesized on
various surfaces. However, almost flat plumbene hosting topologically protected edge states …
various surfaces. However, almost flat plumbene hosting topologically protected edge states …
Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air
We report on the conversion of epitaxial monolayer graphene on SiC (0 0 0 1) into
decoupled bilayer graphene by performing an annealing step in air. We prove by Raman …
decoupled bilayer graphene by performing an annealing step in air. We prove by Raman …