[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Direct view of hot carrier dynamics in graphene

JC Johannsen, S Ulstrup, F Cilento, A Crepaldi… - Physical Review Letters, 2013 - APS
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum
and plays a central role for many electronic and optoelectronic applications. Harvesting …

Giant Faraday rotation in single-and multilayer graphene

I Crassee, J Levallois, AL Walter, M Ostler, A Bostwick… - Nature Physics, 2011 - nature.com
The rotation of the polarization of light after passing a medium in a magnetic field,
discovered by Faraday, is an optical analogue of the Hall effect, which combines sensitivity …

Origin of do** in quasi-free-standing graphene on silicon carbide

J Ristein, S Mammadov, T Seyller - Physical review letters, 2012 - APS
We explain the robust p-type do** observed for quasi-free-standing graphene on
hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism …

The quasi-free-standing nature of graphene on H-saturated SiC (0001)

F Speck, J Jobst, F Fromm, M Ostler… - Applied Physics …, 2011 - pubs.aip.org
We report on an investigation of quasi-free-standing graphene on 6H-SiC (0001) which was
prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption …

Intrinsic terahertz plasmons and magnetoplasmons in large scale monolayer graphene

I Crassee, M Orlita, M Potemski, AL Walter, M Ostler… - Nano …, 2012 - ACS Publications
We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into
a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as …

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC (0001)

F Fromm, MH Oliveira Jr, A Molina-Sánchez… - New Journal of …, 2013 - iopscience.iop.org
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001) -
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Highly p-doped epitaxial graphene obtained by fluorine intercalation

AL Walter, KJ Jeon, A Bostwick, F Speck… - Applied Physics …, 2011 - pubs.aip.org
We present a method for decoupling epitaxial graphene grown on SiC (0001) by
intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a …

Proximity-induced gap opening by twisted plumbene in epitaxial graphene

C Ghosal, M Gruschwitz, J Koch, S Gemming… - Physical Review Letters, 2022 - APS
Besides graphene, further honeycomb 2D structures were successfully synthesized on
various surfaces. However, almost flat plumbene hosting topologically protected edge states …

Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air

MH Oliveira Jr, T Schumann, F Fromm, R Koch… - Carbon, 2013 - Elsevier
We report on the conversion of epitaxial monolayer graphene on SiC (0 0 0 1) into
decoupled bilayer graphene by performing an annealing step in air. We prove by Raman …