Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

BiFeO3-based heterostructures have attracted much attention for potential applications due
to their room-temperature multiferroic properties, proper band gaps and ultrahigh …

The Dzyaloshinskii-Moriya interaction (DMI) has been recently recognized to play a crucial
role in allowing fast domain wall dynamics driven by spin-orbit torques and the generation of …

Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access
memories. Successful implementation depends on a simultaneous achievement of low …

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive
attentions due to its non-volatility, high density and low power consumption. The core device …

We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by
graphene coating from both first-principles and experiments. Our calculations show that …

Electric control of topological magnetic phases has attracted extensive attention due to its
potential applications in energy-efficient spintronic devices. Here, using first-principles …

We report on the magnetic properties of individual Fe atoms deposited on MgO (100) thin
films probed by x-ray magnetic circular dichroism and scanning tunneling spectroscopy. We …

Perpendicular magnetic tunnel junctions in the next-generation magnetic memory using
current induced magnetization switching will likely rely on a material design that can …

Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …