First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The diffusion of relevant native point defects in wurtzite GaN crystals is investigated using
first-principles density-functional pseudopotential calculations. Our reexamination of the …

In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow
luminescence (YL) band gives way to a green luminescence (GL) band at high excitation …

The properties of materials are often controlled by defects and impurities. This is particularly
true in the case of semiconductors, where the incorporation of impurities in small …

Abstract Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown
surfaces were prepared on freestanding GaN substrates by using our advanced hydride …

The spatial distribution of defect-related and band-edge luminescence from GaN nanowires
grown by metal− organic chemical vapor deposition was studied by spatially resolved …

GaN community has recently recognized that it is imperative that the extended, and point
defects in GaN and related materials, and the mechanisms for their formation are …

Carrier dynamics in hydride vapor phase epitaxy grown bulk GaN with very low density of
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …