Magnetic two-dimensional materials have attracted considerable attention for their
significant potential application in spintronics. In this study, we present a high-quality Fe …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Due to the enhanced piezoelectric properties, excellent mechanical properties and tunable
electric properties, one-dimensional (1D) piezoelectric materials have shown their promising …

In recent years, quasi-1D semiconductor nanowires have attracted significant research
interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V …

Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …

We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor
nanowire device using a four-terminal design. Compared to previous studies, thinner InAs …

Growth of high-quality single-crystalline InSb layers remains challenging in material science.
Such layered InSb materials are highly desired for searching for and manipulation of …

Although various device structures based on GaSb nanowires have been realized, further
performance enhancement suffers from uncontrolled radial growth during the nanowire …

Single-nanowire photodetectors have potential applications in integrated optoelectronic
devices and systems. Here, bandgap-engineered GaAs 0.26 Sb 0.74 alloy nanowires were …

Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective
layer. The negative photoconductivity is strongly dependent on the wavelength and intensity …