We present analytical expressions for internal electric field and strain in single and multiple
quantum wells, incorporating electromechanical coupling, spontaneous polarization, and …

By employing a variational approach, we have investigated the effect of conduction band
non-parabolicity (NP) on the binding energy (E b) and the susceptibility diamagnetic (χ dia) …

The hexagonal single quantum well fabricated using the nitride semiconductor
heterostructures GaN/In x Ga 1− x N/GaN contains a built-in electric field as a result of lattice …

A new investigation on anisotropic nonlinear optical properties of GaN/AlN quantum dots
with multitype-tunable shape under electric field have been performed in the effective mass …

Based on the density matrix method and the iterative treatment, the second-harmonic
generation (SHG) susceptibility of a wurtzite nitride coupling quantum well (CQW) with …

Within the framework of effective-mass approximation, the binding energy of a hydrogenic
donor impurity in a zinc-blende (ZB) InGaN/GaN cylindrical quantum dot (QD) is investigated …

We exploit the three-dimensional (3D) character of the strain field created around InGaN
islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer …

Carrier screening effects on an optical rectification (OR) susceptibility of InGaN/GaN
coupling quantum well (CQW) structures are theoretically investigated by using effective …

Based on the effective-mass approximation, the effects of the electric field and hydrostatic
pressure on exciton states in a cylindrical zinc-blende (ZB) GaN/AlGaN quantum dot (QD) …

Electron Raman scattering (ERS) in wurtzite InxGaN1− x/GaN coupled quantum wells
(CQWs) is investigated by effective-mass approximation and second-perturbation approach …