Reconfigurable field effect transistors: A technology enablers perspective

T Mikolajick, G Galderisi, S Rai, M Simon, R Böckle… - Solid-State …, 2022‏ - Elsevier
With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …

The RFET—A reconfigurable nanowire transistor and its application to novel electronic circuits and systems

T Mikolajick, A Heinzig, J Trommer… - Semiconductor …, 2017‏ - iopscience.iop.org
With CMOS scaling reaching physical limits in the next decade, new approaches are
required to enhance the functionality of electronic systems. Reconfigurability on the device …

20 Years of reconfigurable field-effect transistors: From concepts to future applications

T Mikolajick, G Galderisi, M Simon, S Rai, A Kumar… - Solid-State …, 2021‏ - Elsevier
The reconfigurable field-effect transistor (RFET), is an electronic device whose conduction
mechanism can be reversibly reconfigured between n-type and p-type operation modes. To …

Top-down fabricated reconfigurable FET with two symmetric and high-current on-states

M Simon, B Liang, D Fischer, M Knaut… - IEEE Electron …, 2020‏ - ieeexplore.ieee.org
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on
a silicon nanowire that can be electrostatically programmed to p-and n-configuration. The …

Novel 3-D fin-RFET with dual-doped source/drain to improve ON-state current

R Zhang, Y Yang, Y Sun, Z Liu, Y Liu… - IEEE Transactions on …, 2022‏ - ieeexplore.ieee.org
Schottky barrier reconfigurable field effect transistors (SB-RFETs) have attracted great
attention in sub-nanometer devices. However, the poor current drivability limits its further …

Germanium nanowire reconfigurable transistor model for predictive technology evaluation

JN Quijada, T Baldauf, S Rai, A Heinzig… - IEEE transactions on …, 2022‏ - ieeexplore.ieee.org
Reconfigurable Field Effect Transistors can be electrostatically programmed to p-or n-type
behavior. This device level reconfigurability is a promising way to enhance the functionality …

Reconfigurable Si field-effect transistors with symmetric on-states enabling adaptive complementary and combinational logic

L Wind, A Fuchsberger, Ö Demirkiran… - … on Electron Devices, 2024‏ - ieeexplore.ieee.org
Reconfigurable field-effect transistors (RFETs), combining n-and p-type operation in a single
device, have already shown promising simulation results for enhancing performance and …

A silicon nanowire ferroelectric field‐effect transistor

V Sessi, M Simon, H Mulaosmanovic… - Advanced Electronic …, 2020‏ - Wiley Online Library
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based
on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated …

Top-down technology for reconfigurable nanowire FETs with symmetric on-currents

M Simon, A Heinzig, J Trommer… - IEEE transactions on …, 2017‏ - ieeexplore.ieee.org
In this paper, a technology for top-down single-gated Schottky barrier transistor is presented
exhibiting the highest symmetry of on-currents for n-and p-conductance of such silicon-on …

[HTML][HTML] Cross-shape reconfigurable field effect transistor for flexible signal routing

C Cakirlar, M Simon, G Galderisi, I O'Connor… - Materials Today …, 2023‏ - Elsevier
Reconfigurable field effect transistors are one of the most promising emerging device
concepts for future computing systems, due to their dynamic p-and n-channel behavior. Over …