All-optical detection of interfacial spin transparency from spin pum** in β-Ta/CoFeB thin films
Generation and utilization of pure spin current have revolutionized energy-efficient
spintronic devices. Spin pum** effect generates pure spin current, and for its increased …
spintronic devices. Spin pum** effect generates pure spin current, and for its increased …
Large Dam**-Like Spin–Orbit Torque in a 2D Conductive 1T-TaS2 Monolayer
A dam**-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic
devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting …
devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting …
High spin mixing conductance and spin interface transparency at the interface of a Co2Fe0.4Mn0.6Si Heusler alloy and Pt
Ferromagnetic materials exhibiting low magnetic dam** (α) and moderately high-
saturation magnetization are required from the viewpoints of generation, transmission, and …
saturation magnetization are required from the viewpoints of generation, transmission, and …
Spin Pum** through Different Spin–Orbit Coupling Interfaces in β-W/Interlayer/Co2FeAl Heterostructures
Spin pum** has been considered a powerful tool to manipulate the spin current in a
ferromagnetic/nonmagnetic (FM/NM) system, where the NM part exhibits large spin–orbit …
ferromagnetic/nonmagnetic (FM/NM) system, where the NM part exhibits large spin–orbit …
Magnetoelastic interactions and magnetic dam** in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications
Abstract Co2Fe0. 4Mn0. 6Si (CFMS) and Co2FeGa0. 5Ge0. 5 (CFGG) Heusler alloys are
among the most promising thin film materials for spintronic devices due to a high spin …
among the most promising thin film materials for spintronic devices due to a high spin …
Structural phase-dependent giant interfacial spin transparency in W/CoFeB thin-film heterostructures
Pure spin current has transformed the research field of conventional spintronics due to its
various advantages, including energy efficiency. An efficient mechanism for generation of …
various advantages, including energy efficiency. An efficient mechanism for generation of …
Comparison of high temperature growth versus post-deposition in situ annealing in attaining very low Gilbert dam** in sputtered Co2FeAl Heusler alloy films
In this work, a detail study on the effectiveness of high substrate temperature (TS) during
deposition versus in situ annealing of the films at high temperature (TA) after sputtering at …
deposition versus in situ annealing of the films at high temperature (TA) after sputtering at …
Impact of ferromagnetic layer thickness on the spin pum** in Co60Fe20B20/Ta bilayer thin films
We report the tuneable spin angular momentum transfer (spin pum**) from Co 60 Fe 20 B
20 (CFB) amorphous alloy into the Ta heavy metal nanolayers. All the films are grown on Si …
20 (CFB) amorphous alloy into the Ta heavy metal nanolayers. All the films are grown on Si …
Effect of stoichiometry and film thickness on the structural and magnetization dynamics behavior of Co2MnAl thin films cosputtered on Si (1 0 0)
Obtaining low gilbert dam** (α) and high spin polarization (P) in Heusler alloy thin films is
one of the key requirements from the device application point of view in spintronics. Both α …
one of the key requirements from the device application point of view in spintronics. Both α …
Large exchange bias and spin pum** in ultrathin IrMn/Co system for spintronic device applications
Few nanometers thick antiferromagnetic/Ferromagnetic bilayer based spintronic devices
have emerged as a potential nanostructured bilayer for achieving ultrahigh-speed …
have emerged as a potential nanostructured bilayer for achieving ultrahigh-speed …