HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and …
H Cheng, J Wang, J Kelly, A Ofiare… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
We present the design, fabrication, and characterization of InGaAs channel high electron
mobility transistors (HEMTs) with ultralow contact resistance for millimeter-wave and …
mobility transistors (HEMTs) with ultralow contact resistance for millimeter-wave and …
Dual Gate HEMT: Compact Cascode for Low-Noise Amplification
G Bonomo, F Ciabattini, T Saranovac… - 2024 15th Global …, 2024 - ieeexplore.ieee.org
The present work compares single-gate (SG) and dual-gate (DG) HEMTs from a low-noise
amplification perspective. Experimental results, obtained through RF and noise …
amplification perspective. Experimental results, obtained through RF and noise …