The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of
high-κ gate dielectrics via higher-κ (> 20) materials and interfacial layer (IL) scavenging …

Semiconductors require stable do** for applications in transistors, optoelectronics, and
thermoelectrics. However, this has been challenging for two-dimensional (2D) materials …

Security is a critical aspect in modern circuit design, but research into hardware security at
the device level is rare as it requires modification of existing technology nodes. With the …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

A model for the physical origin of the dipole formed at high-k/SiO 2 interface is proposed. In
our model, an areal density difference of oxygen atoms at high-k/SiO 2 interface is …

Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …

This year marks a major materials milestone in the makeup of silicon-based field-effect
transistors: in the microprocessors produced by leading manufacturers, the SiO2 gate …

The HfO 2–Si valence and conduction band offsets (VBO and CBO, respectively) of
technologically relevant HfO 2/SiO 2/Si film stacks have been measured by several methods …

The mechanism of flat-band voltage shifts in La-and Al-based, etc., oxide cap** layers in
high-K (dielectric constant) metal gate stacks is investigated by ab initio calculations on …