Laser gain regions using quantum dots have numerous improvements over quantum wells
for photonic integration. Their atom-like density of states gives them unique gain properties …

Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and
scalability advantages over heterogeneous integration. The challenge is that epitaxial …

Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …

We show that the various techniques commonly used to measure the linewidth
enhancement factor can lead to different values when applied to quantum dot …

This paper provides a review of the recent developments of self-organized In (Ga) As/Ga (Al)
As quantum dot lasers grown directly on Si, as well as their on-chip integration with Si …

The characteristics of 1.55 μ\rmm InAs self-organized quantum-dot lasers, grown on (001)
InP substrates by molecular beam epitaxy, have been investigated. Modulation do** of the …

We demonstrate passive mode locking in one-section monolithic semiconductor laser
diodes based on quantum-dash active layer at very high repetition rate in the 1.5 μ m …

The dynamics of optical gain in semiconductor quantum dots (QDs) is investigated. Simple
analytical expressions are derived, which directly connect the laser dynamical response to …

The modulation response of quantum-dot (QD) lasers is studied. Based on a set of four rate
equations, a new analytical modulation transfer function is developed via a small-signal …