An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …
challenges for electronic system designers and nuclear power plant personnel, in particular …
Radiation effects in SiGe technology
JD Cressler - IEEE transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
The effects and mechanisms of 2 MeV proton irradiation on high bias conditions of InP/InGaAs DHBTs
R Liu, B Mei, Y Su, F Yang, J Zhang, C Zhang… - Solid-State …, 2024 - Elsevier
In this work, a 2 MeV proton irradiation experiment has been carried out on self-fabricated
InP/InGaAs heterojunction bipolar transistors (HBTs) with fluence of 5× 10 13 H+/cm 2 and …
InP/InGaAs heterojunction bipolar transistors (HBTs) with fluence of 5× 10 13 H+/cm 2 and …
[HTML][HTML] Characterising the Pelletron beam at the University of Melbourne
Abstract The Pelletron at the University of Melbourne is a DC particle accelerator that has
been used for materials analysis and ion implantation since its installation in the 1970s …
been used for materials analysis and ion implantation since its installation in the 1970s …
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases
J Zhang, Q Guo, HX Guo, W Lu, C He, X Wang… - Microelectronics …, 2018 - Elsevier
This paper evaluates enhanced low dose rate sensitivity (ELDRS) in Silicon–Germanium
heterojunction bipolar transistors (SiGe HBTs) which are isolated by LOCOS process. The …
heterojunction bipolar transistors (SiGe HBTs) which are isolated by LOCOS process. The …
Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation
Z Liu, Y Sun, T Wang, X Li, Y Shi - Materials Science in Semiconductor …, 2021 - Elsevier
Abstract Radiation effects of 20 MeV Br on bipolar transistors are investigated in this work. A
distinct different bias dependences are found for damage factors (DF) of forward and reverse …
distinct different bias dependences are found for damage factors (DF) of forward and reverse …
Irradiation effects of 25 MeV silicon ions on SiGe heterojunction bipolar transistors
Silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) were exposed to 25
MeV Si 4+ ion with equivalent absorbed dose from 200 krad (Si) to 10 Mrad (Si). The …
MeV Si 4+ ion with equivalent absorbed dose from 200 krad (Si) to 10 Mrad (Si). The …
[HTML][HTML] High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200áGHz SiGe HBTs
The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100áMeV
phosphorous (P 7+) and 80áMeV nitrogen (N 6+) ions on 200áGHz silicon-germanium …
phosphorous (P 7+) and 80áMeV nitrogen (N 6+) ions on 200áGHz silicon-germanium …
A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors
The third-generation (200áGHz) silicon–germanium heterojunction bipolar transistors were
irradiated with 100áMeV oxygen [O7+] ions in the dose range from 1 to 100áMrad. The …
irradiated with 100áMeV oxygen [O7+] ions in the dose range from 1 to 100áMrad. The …
Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation
Y Sun, Z Liu, J Fu, Y Shi, X Li - Radiation Physics and Chemistry, 2019 - Elsevier
In this study, the performance degradation and annealing behavior of NPN SiGe HBT
exposed to swift heavy ion irradiation were investigated. The direct current (DC) …
exposed to swift heavy ion irradiation were investigated. The direct current (DC) …