Ultra-low power VLSI circuit design demystified and explained: A tutorial

M Alioto - IEEE Transactions on Circuits and Systems I: Regular …, 2012‏ - ieeexplore.ieee.org
In this paper, the state of the art in ultra-low power (ULP) VLSI design is presented within a
unitary framework for the first time. A few general principles are first introduced to gain an …

A 32 kb 10T sub-threshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS

IJ Chang, JJ Kim, SP Park, K Roy - IEEE Journal of Solid-State …, 2009‏ - ieeexplore.ieee.org
Ultra-low voltage operation of memory cells has become a topic of much interest due to its
applications in very low energy computing and communications. However, due to parameter …

Ultralow-voltage process-variation-tolerant Schmitt-trigger-based SRAM design

JP Kulkarni, K Roy - IEEE transactions on very large scale …, 2011‏ - ieeexplore.ieee.org
We analyze Schmitt-Trigger (ST)-based differential-sensing static random access memory
(SRAM) bitcells for ultralow-voltage operation. The ST-based SRAM bitcells address the …

Variation tolerant differential 8T SRAM cell for ultralow power applications

S Pal, A Islam - IEEE transactions on computer-aided design of …, 2015‏ - ieeexplore.ieee.org
Low power and noise tolerant static random access memory (SRAM) cells are in high
demand today. This paper presents a stable differential SRAM cell that consumes low …

Low store energy, low VDDmin, 8T2R nonvolatile latch and SRAM with vertical-stacked resistive memory (memristor) devices for low power mobile applications

PF Chiu, MF Chang, CW Wu… - IEEE Journal of Solid …, 2012‏ - ieeexplore.ieee.org
Many mobile SoC chips employ a “two-macro” approach including volatile and nonvolatile
memory macros (ie SRAM and Flash), to achieve high-performance or low-voltage power-on …

Energy-efficient subthreshold processor design

B Zhai, S Pant, L Nazhandali, S Hanson… - … Transactions on Very …, 2009‏ - ieeexplore.ieee.org
Subthreshold circuits have drawn a strong interest in recent ultralow power research. In this
paper, we present a highly efficient subthreshold microprocessor targeting sensor …

Single-ended subthreshold SRAM with asymmetrical write/read-assist

MH Tu, JY Lin, MC Tsai, SJ Jou… - IEEE Transactions on …, 2010‏ - ieeexplore.ieee.org
In this paper, asymmetrical Write-assist cell virtual ground biasing scheme and positive
feedback sensing keeper schemes are proposed to improve the read static noise margin …

Yield-driven near-threshold SRAM design

G Chen, D Sylvester, D Blaauw… - IEEE transactions on …, 2009‏ - ieeexplore.ieee.org
Voltage scaling is desirable in static RAM (SRAM) to reduce energy consumption. However,
commercial SRAM is susceptible to functional failures when V DD is scaled down. Although …

A variation-tolerant sub-200 mV 6-T subthreshold SRAM

B Zhai, S Hanson, D Blaauw… - IEEE Journal of Solid …, 2008‏ - ieeexplore.ieee.org
In this paper, we present a deep subthreshold 6-T SRAM, which was fabricated in an
industrial 0.13 mum CMOS technology. We first use detailed simulations to explore the …

Nanometer MOSFET variation in minimum energy subthreshold circuits

N Verma, J Kwong… - IEEE Transactions on …, 2007‏ - ieeexplore.ieee.org
Minimum energy operation for digital circuits typically requires scaling the power supply
below the device threshold voltage. Advanced technologies offer improved integration …