GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and
distinctive advantages for display, visible-light communication (VLC), and other novel …

GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

Ultrasmall blue InGaN micro-light-emitting diodes (µLEDs) with areas from 10− 4 to 0.01 mm
2 were fabricated to study their optical and electrical properties. The peak external quantum …

We investigated the optical and electrical properties of red AlGaInP light-emitting diodes
(LEDs) as functions of chip size, p-cladding layer thickness, and the number of multi …

Abstract 240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.
Then, the external quantum efficiency (EQE) and light extraction efficiency (LEE) are …

In this work, we fabricated and characterized 4× 4 parallel flip-chip AlGaN-based micro-LED
arrays with varied mesa diameters of 120 µm, 100 µm, 80 µm, and 60 µm. The reported …

In this report, the impact of different mesa designs on the optical and electrical
characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically …

Gallium nitride (GaN)‐based light‐emitting diodes (LEDs) have obtained great market
success in the past 20 years. However, the traditional research paradigm, ie, experimental …

Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs)
strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as …

This work investigates the size-dependent decrease in external quantum efficiency (EQE) of
various InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diodes (μ …