Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …

In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

Continuous miniaturization of semiconductor devices is the key to boosting modern
electronics development. However, this downscaling strategy has been rarely utilized in …

III–V semiconductor nanowires have gained intensive attention for solar cell applications
due to their unique geometrical, optical, and electrical properties, as well as improved …

Various wearable electronic devices have been developed for extensive outdoor activities.
The key metrics for these wearable devices are high touch sensitivity and good mechanical …

Subwavelength Mie resonators have enabled new classes of optical antenna and
nanophotonic devices and can act as the basic meta-atom constituents of low-loss dielectric …

Nanophotonics allows the manipulation of light on the subwavelength scale. Optical
nanoantennas are nanoscale elements that enable increased resolution in bioimaging …

In this work we demonstrate single axial pin junction InP nanowire (NW) solar cells grown by
selective-area metal organic vapor phase epitaxy (SA-MOVPE) technique. A power …

Here we demonstrate a more effective use of III–V photoconversion material to achieve an
ultrahigh power-per-weight ratio from a solar cell utilizing an axial pin junction GaAs/AlGaAs …

We propose the optical design for the absorptive element of photodetectors to achieve
wavelength selective photo response based on resonant guided modes supported in …