The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

F Palumbo, C Wen, S Lombardo… - Advanced Functional …, 2020 - Wiley Online Library
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …

Nonvolatile memory materials for neuromorphic intelligent machines

DS Jeong, CS Hwang - Advanced Materials, 2018 - Wiley Online Library
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

HY Yoong, H Wu, J Zhao, H Wang… - Advanced Functional …, 2018 - Wiley Online Library
Doped‐HfO2 thin films with ferroelectricity have attracted great attention due to their
potential application in semiconductor industry as negative capacitance and resistance …

[HTML][HTML] On the thermal models for resistive random access memory circuit simulation

JB Roldán, G González-Cordero, R Picos, E Miranda… - Nanomaterials, 2021 - mdpi.com
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

Compliance-free, digital SET and analog RESET synaptic characteristics of sub-tantalum oxide based neuromorphic device

Y Abbas, YR Jeon, AS Sokolov, S Kim, B Ku, C Choi - Scientific reports, 2018 - nature.com
A two terminal semiconducting device like a memristor is indispensable to emulate the
function of synapse in the working memory. The analog switching characteristics of …

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices

SU Sharath, S Vogel, L Molina‐Luna… - Advanced Functional …, 2017 - Wiley Online Library
Hafnium oxide (HfOx)‐based memristive devices have tremendous potential as nonvolatile
resistive random access memory (RRAM) and in neuromorphic electronics. Despite its …

Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices

S Petzold, A Zintler, R Eilhardt, E Piros… - Advanced Electronic …, 2019 - Wiley Online Library
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …

Resistive memory‐based in‐memory computing: from device and large‐scale integration system perspectives

B Yan, B Li, X Qiao, CX Xue, MF Chang… - Advanced Intelligent …, 2019 - Wiley Online Library
In‐memory computing is a computing scheme that integrates data storage and arithmetic
computation functions. Resistive random access memory (RRAM) arrays with innovative …

Charge transport in the A6B2O17 (A= Zr, Hf; B= Nb, Ta) superstructure series

T Miruszewski, A Mielewczyk-Gryń… - Journal of The …, 2024 - iopscience.iop.org
The electrical properties of the entropy stabilized oxides: Zr 6 Nb 2 O 17, Zr 6 Ta 2 O 17, Hf 6
Nb 2 O 17 and Hf 6 Ta 2 O 17 were characterized. The results and the electrical properties of …