Atomic layer deposition of thin films: from a chemistry perspective

J Li, G Chai, X Wang - International Journal of Extreme …, 2023 - iopscience.iop.org
Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …

An index-free sparse neural network using two-dimensional semiconductor ferroelectric field-effect transistors

H Ning, H Wen, Y Meng, Z Yu, Y Fu, X Zou, Y Shen… - Nature …, 2025 - nature.com
The fine-grained dynamic sparsity in biological synapses is an important element in the
energy efficiency of the human brain. Emulating such sparsity in an artificial system requires …

A cold-electrode metal–oxide resistive random access memory

J Cao, B Chen, Z Wang, J Qu, J Zhao, R Shen… - Applied Physics …, 2024 - pubs.aip.org
To reduce the leakage and power consumption of metal–oxide resistive random access
memory (RRAM), we propose and fabricate a cold-electrode (CE) RRAM (CE-RRAM) by …

Area-Efficient Integration of Embedded 0.5 F0. 5R Hybrid Memory and High Mobility Logic Device on Ge

X Ding, Z Lan, S Zhu, S Gao, M Su… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This work presents the first demonstration of an embedded 0.5-Flash-0.5-RRAM (0.5 F0. 5R)
hybrid memory on Ge, which can be efficiently integrated with advanced Ge logic devices …

[KİTAP][B] Hafnium Oxide Based Ferroelectric Materials for Memory Applications

Z Yu - 2022 - search.proquest.com
Innovations of memory technologies are essential for addressing the future needs of data
processing and storage. The discovery of ferroelectricity in hafnia (HfO 2)-based materials …