Cutting edge science and technology needs high quality data storage devices for their
applications in artificial intelligence and digital industries. Resistive random access memory …

Hafnium oxide-and GeSbTe-based functional layers are promising candidates in material
systems for emerging memory technologies. They are also discussed as contenders for …

The emergence of the big data era has led to enormous demand for memory devices that
are low cost, flexible, fabrication friendly, transparent, energy efficient, and have a higher …

In this paper, we present the results of our systematic investigations of the resistive switching
characteristics of HfO2-based metal–insulator–metal structures using four different metal …

A report on the fabrication and radiation response of HfO x thin film-based resistive random
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …

We report a study on the effects of O2/Ar ratio on the resistive switching properties of HfO x
thin-films deposited by using RF magnetron sputtering. Ar is kept at a constant flow rate of 30 …

In this work, we present a detailed study on the effects of energetic ions and gamma
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …

The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory
devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of …

We report an athermal laser annealing technique to fabricate a high-density array of gold
nanoparticles on the surface of hafnium oxide thin films without altering the phase of HfO2 …

Abstract 2D material has a great attraction towards memory device fabrication for their
greater potential application in low power and fast switching nature. Molybdenum disulfide …